Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C.
The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.Ī multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells The physical mechanisms responsible for this discrepancy are identified and characterized. Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. Studies of silicon p-n junction solar cells. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices (2) heavily doped transparent regions in junction solar cells, diodes, and transistors (3) high-low-emitter solar cell (4) determination of lifetimes and recombination currents in p-n junction solar cells (5) MOS and oxide-charged-induced BSF solar cells and (6) design of high efficiency solar cells for space and terrestrial applications. To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Studies of silicon p-n junction solar cells
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